1999. 11. 30
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SEMICONDUCTOR
TECHNICAL DATA
BC849/850
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
For Complementary With PNP Type BC859/860.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification B:200 450, C:420 800
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter
Breakdown Voltage
BC849
V
(BR)CEO
I
C
=10mA, I
B
=0
30
-
-
V
BC850
45
-
-
Collector-Base
Breakdown Voltage
BC849
V
(BR)CBO
I
C
=10 A, I
E
=0
30
-
-
V
BC850
50
-
-
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
5
-
-
V
Collector Cut-off Current
I
CBO
V
CB
=30V, I
E
=0
-
-
15
nA
DC Current Gain
h
FE
(Note)
I
C
=2mA, V
CE
=5V
200
-
800
Base-Emitter Voltage
V
BE(ON)
1
I
C
=2mA, V
CE
=5V
0.58
0.66
0.7
V
V
BE(ON)
2
I
C
=10mA, V
CE
=5V
-
-
0.77
Collector-Emitter Saturation Voltage
V
CE(sat)
1
I
C
=10mA, I
B
=0.5mA
-
0.09
0.25
V
V
CE(sat)
2
I
C
=100mA, I
B
=5mA
-
0.2
0.6
Base-Emitter Saturation Voltage
V
BE(sat)
1
I
C
=10mA, I
B
=0.5mA
-
0.7
-
V
V
BE(sat)
2
I
C
=100mA, I
B
=5mA
-
0.9
-
Transition Frequency
f
T
I
C
=10mA, V
CE
=5V, f=100MHz
-
300
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
2.5
4.5
pF
Noise Figure
BC849
NF
I
C
=200 A, V
CE
=5V
Rg=10k , f=1kHz
-
-
4.0
dB
BC850
-
-
1.0
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
BC849
V
CBO
30
V
BC850
50
Collector-Emitter Voltage
BC849
V
CEO
30
V
BC850
45
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
100
mA
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
P
C
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
TYPE
BC849B
BC849C
BC850B
BC850C
MARK
2B
2C
2F
2G
MARK SPEC
Type Name
Marking
Lot No.
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